(Data obrony: 2006) Kowalik, Remigiusz Wydział Metali Nieżelaznych
The II-VI wide band-gap semiconductors are very interesting materials because of their potential application in electronic devices like electroluminescence diodes, lasers or light detectors. They can be used in producing data storage devices, display devices or multijunction solar cells. There are many methods for the preparation of these materials. Electrodeposition has been found to be a very good method to fabricate thin films of compound semiconductors. It is low-cost and simple method with many advantages as: possibility of a deposition on large surface areas (even irregular), and assures precise control of this process by adjusting several parameters. The main goal of this work is to analyze the mechanism and kinetics of the electrosynthesis of zinc selenide by electrochemical process from aqueous solution. The voltammetric, hydrodynamic and electrogravimetric measurements were carried out under following condition: concentration of $ZnSO_{4} \; \; 0,1-0,8 \; mol/dm^{3}, \; H_{2}SeO_{3} \; 0,001-0,008 \; mol/dm^{3}, \; pH=2$, temperature 25-75°C. Subsequently process of deposition was carry out under potentiostatic conditions. The influence of deposition potential, the composition and temperaturę of the electrolyte on the stoichiometry composition and morphology of the obtained deposits were examined.
