Analysis of the decay time and bound-states energies of a particle in a specific structure GaMnAs/GaAs quantum well

Abstract

The bound states and decay time in a certain quantum well structure (GaMnAs/GaAs) were analysed and identified at the minimum decay time. Through the analysis of quantum mathematical equations, we derived specific formulas for energies that significantly amplify the numerical solutions of equations throughout all dimensions of confinement. Without altering the parameters utilized, the quantification, barriers, and well width were predominantly influenced by the spatial dimension parameters, such as the barrier height and well width. The principal bound state and lowest decay time were determined at a well width of 40 Å and a barrier thickness of 46.27 Å. This work revealed a novel characteristic known as interfacial tunnelling, which refers to the phenomenon where an electron establishes a tunnelling state between two interfaces. This tunnelling process is significantly influenced by the characteristics of the materials used, as well as the dimensions of the wells and barriers.